Channel-Last GAA NS Oxide FET (Stanford, TSMC, ETH Zurich et al.)

A new technical paper titled “Channel-last gate-all-around nanosheet oxide semiconductor transistors” was published by researchers at Stanford University, TSMC, ETH Zurich, SLAC National Accelerator Laboratory, and Polish Academy of Sciences. Abstract “As we move beyond the era of transistor miniaturization, back-end-of-line-compatible transistors that can be stacked monolithically in the third dimension promise improved performance for... » read more
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