SiGeSn SBFETs at Cryogenic Temperatures (Tu Wien et al)

A new technical paper titled “A Cryogenic Ultra-Thin Body SiGeSn Transistor” was published by researchers at TU Wien, Johannes Kepler University, Universidad de Granada, and Max Planck Institute for Sustainable Materials. Abstract “Transistors capable of operating at cryogenic temperatures are key components for the fast and energy-efficient control and readout of qubits. However, the ultra-low... » read more
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